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Division Spotlight
Mathematics & Computation
Division members promote the advancement of mathematical and computational methods for solving problems arising in all disciplines encompassed by the Society. They place particular emphasis on numerical techniques for efficient computer applications to aid in the dissemination, integration, and proper use of computer codes, including preparation of computational benchmark and development of standards for computing practices, and to encourage the development on new computer codes and broaden their use.
Meeting Spotlight
2027 ANS Winter Conference and Expo
October 31–November 4, 2027
Washington, DC|The Westin Washington, DC Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Disney World should have gone nuclear
There is extra significance to the American Nuclear Society holding its annual meeting in Orlando, Florida, this past week. That’s because in 1967, the state of Florida passed a law allowing Disney World to build a nuclear power plant.
Ahmad Al-Rashdan, Troy Unruh, Mitchell A. Plummer, Pattrick Calderoni, Kurt Davis (INL)
Proceedings | Nuclear Plant Instrumentation, Control, and Human-Machine Interface Technolgies (NPIC&HMIT 2019) | Orlando, FL, February 9-14, 2019 | Pages 1319-1323
Silicon carbide (SiC) monitors provide a means of measuring peak irradiation temperature of static capsules in nuclear irradiation experiments. Neutron irradiation of a SiC monitor causes permanent lattice changes that are removed by annealing to a temperature that exceeds the peak irradiation temperature. The annealing process results in changes to SiC physical characteristics that can be observed during the annealing process. This paper presents preliminary results of a method aimed at using electrical resistance, measured during a two-pass heating – cooling cycle as a means of recovering the irradiation temperature of a SiC monitor. Results indicate that the relationship between resistance and temperature of a SiC monitor shows a significant change in slope when the peak irradiation temperature is reached. This demonstrates the potential for this method to replace the current manual, and lengthy, process of post irradiation examination used to extract the peak irradiation temperature from irradiated SiC monitors.