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Division Spotlight
Radiation Protection & Shielding
The Radiation Protection and Shielding Division is developing and promoting radiation protection and shielding aspects of nuclear science and technology — including interaction of nuclear radiation with materials and biological systems, instruments and techniques for the measurement of nuclear radiation fields, and radiation shield design and evaluation.
Meeting Spotlight
International Conference on Mathematics and Computational Methods Applied to Nuclear Science and Engineering (M&C 2025)
April 27–30, 2025
Denver, CO|The Westin Denver Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
Argonne’s METL gears up to test more sodium fast reactor components
Argonne National Laboratory has successfully swapped out an aging cold trap in the sodium test loop called METL (Mechanisms Engineering Test Loop), the Department of Energy announced April 23. The upgrade is the first of its kind in the United States in more than 30 years, according to the DOE, and will help test components and operations for the sodium-cooled fast reactors being developed now.
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.