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Accelerator Applications
The division was organized to promote the advancement of knowledge of the use of particle accelerator technologies for nuclear and other applications. It focuses on production of neutrons and other particles, utilization of these particles for scientific or industrial purposes, such as the production or destruction of radionuclides significant to energy, medicine, defense or other endeavors, as well as imaging and diagnostics.
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ANS Student Conference 2025
April 3–5, 2025
Albuquerque, NM|The University of New Mexico
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
First astatine-labeled compound shipped in the U.S.
The Department of Energy’s National Isotope Development Center (NIDC) on March 31 announced the successful long-distance shipment in the United States of a biologically active compound labeled with the medical radioisotope astatine-211 (At-211). Because previous shipments have included only the “bare” isotope, the NIDC has described the development as “unleashing medical innovation.”
Ruixuan Han, Liucheng Liu, Rui Tu, Wei Xiao, Yingying Li, Huailin Li, Dan Shao
Nuclear Technology | Volume 195 | Number 2 | August 2016 | Pages 192-203
Technical Paper | doi.org/10.13182/NT15-109
Articles are hosted by Taylor and Francis Online.
Iodine atom interstitial configurations and diffusion in bulk β-SiC and α-Zr are calculated using first-principles calculations and the nudged elastic band method. The formation energy of an I interstitial in bulk silicon carbide (SiC) is ten times higher than that of an I interstitial in bulk Zr. The I interstitial is very difficult to introduce into bulk SiC compared with the doping process in bulk Zr. The diffusion mechanisms of an I atom in SiC and Zr are exchange mechanisms. Iodine interstitial diffusion in bulk SiC is roughly an isotropic process along a path that is a series of combinations of ISi → Ic and Ic → ISi, with a diffusion barrier of 1.20 eV and an attempt-to-diffuse frequency Γ0 25.12 THz. Meanwhile, I interstitial diffusion in bulk Zr is an anisotropic process. An I interstitial atom diffuses mainly between two Zr atom [0001] layers along a zigzag path with a diffusion barrier of 0.16 eV and an attempt-to-diffuse frequency Γ0 = 2.88 THz. In general, the diffusion rate of an I interstitial in bulk SiC is lower than that in bulk Zr in the temperature range from 290 to 3000 K. The defect effect on I diffusion is an interesting topic for future study.