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Division Spotlight
Materials Science & Technology
The objectives of MSTD are: promote the advancement of materials science in Nuclear Science Technology; support the multidisciplines which constitute it; encourage research by providing a forum for the presentation, exchange, and documentation of relevant information; promote the interaction and communication among its members; and recognize and reward its members for significant contributions to the field of materials science in nuclear technology.
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Utility Working Conference and Vendor Technology Expo (UWC 2024)
August 4–7, 2024
Marco Island, FL|JW Marriott Marco Island
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
Vogtle-3 shuts down for valve issue
One of the new Vogtle units in Georgia was shut down unexpectedly on Monday last week for a valve issue that has since been investigated and repaired. According to multiple local news outlets, Georgia Power reported on July 17 that Unit 3 was back in service.
Southern Company spokesperson Jacob Hawkins confirmed that Vogtle-3 went off line at 9:25 p.m. local time on July 8 “due to lowering water levels in the steam generators caused by a valve issue on one of the three main feedwater pumps.”
Mohamed S. El-Genk, Hamed H. Saber
Nuclear Technology | Volume 132 | Number 2 | November 2000 | Pages 290-308
Technical Paper | Decontamination/Decommissioning | doi.org/10.13182/NT00-A3145
Articles are hosted by Taylor and Francis Online.
Recent experiments have shown that radio-frequency (rf) plasma glow discharge using NF3 gas is an effective technique for the removal of uranium oxide from metal surfaces. The results of these experiments are analyzed to explain the measured dependence of the UO2 removal or etch rate on the NF3 gas pressure and the absorbed power in the plasma. The NF3 gas pressure in the experiments was varied from 10.8 to 40 Pa, and the deposited power in the plasma was varied from 25 to 210 W. The UO2 etch rate was strongly dependent on the absorbed power and, to a lesser extent, on the NF3 pressure and decreased exponentially with immersion time. At 210 W and 17 Pa, all detectable UO2 in the samples (~10.6 mg each) was removed at the endpoint, whereas the initial etch rate was ~3.11 m/min. When the absorbed power was 50 W, however, the etch rate was initially ~0.5 g/min and almost zero at the endpoint, with UO2 only partially etched. This self-limiting etching of UO2 at low power is attributed to the formation of nonvolatile intermediates UF2, UF3, UF4, UF5, UO2F, and UO2F2 on the surface. Analysis indicated that the accumulation of UF6 and, to a lesser extent, O2 near the surface partially contributed to the exponential decrease in the UO2 etch rate with immersion time. Unlike fluorination with F2 gas, etching of UO2 using rf glow discharge is possible below 663 K. The average etch rates of the amorphous UO2 in the NF3 experiments are comparable to the peak values reported in other studies for crystalline UO2 using CF4/O2 glow discharge performed at ~150 to 250 K higher sample temperatures.