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Conference Spotlight
Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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World Bank, IAEA partner to fund nuclear energy
The World Bank and the International Atomic Energy Agency signed an agreement last week to cooperate on the construction and financing of advanced nuclear projects in developing countries, marking the first partnership since the bank ended its ban on funding for nuclear energy projects.
Robert J. Schott, Charles L. Weaver, Mark A. Prelas, Kyuhak Oh, Jason B. Rothenberger, R. V. Tompson, Denis A. Wisniewski
Nuclear Technology | Volume 181 | Number 2 | February 2013 | Pages 349-353
Technical Paper | Radioisotopes | doi.org/10.13182/NT13-A15789
Articles are hosted by Taylor and Francis Online.
The use of a photon intermediate direct energy conversion (PIDEC) process to develop a proof of concept of a long-lived and efficient nuclear battery powered by a radioactive beta source is discussed. Fundamentally, PIDEC is a means of matching the scale length of the range of radiation to the scale length of the transducer. The device uses a photovoltaic cell and excimer gas-based photon source. In this work, argon was used to produce the excimer photon source (argon excimer at 129 nm) with a pressure range from 7 × 10-3 to 1.4 × 107 Pa (10-6 to 2100 psig). The beta source used in this study was a 90Sr source that has a daughter, 90Y, that then decays to stable 90Zr. Intermediate shielding from lead and an argon gas plenum were used to prevent damage to the photovoltaic cell. This battery demonstrated power variations with gas pressure as expected, and no radiation damage to the photovoltaic cell was observed over a period in excess of 150 h. Such a long exposure period demonstrates the desired tolerance of the device to the direct radiation damage that would otherwise be sustained in normal semiconductor-based energy conversion systems.