ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Division Spotlight
Accelerator Applications
The division was organized to promote the advancement of knowledge of the use of particle accelerator technologies for nuclear and other applications. It focuses on production of neutrons and other particles, utilization of these particles for scientific or industrial purposes, such as the production or destruction of radionuclides significant to energy, medicine, defense or other endeavors, as well as imaging and diagnostics.
Meeting Spotlight
Utility Working Conference and Vendor Technology Expo (UWC 2024)
August 4–7, 2024
Marco Island, FL|JW Marriott Marco Island
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Jul 2024
Jan 2024
Latest Journal Issues
Nuclear Science and Engineering
August 2024
Nuclear Technology
Fusion Science and Technology
Latest News
ARPA-E announces $40 million to develop transmutation technologies for UNF
The Department of Energy’s Advanced Research Projects Agency–Energy (ARPA-E) announced $40 million in funding to develop cutting-edge technologies to enable the transmutation of used nuclear fuel into less-radioactive substances. According to ARPA-E, the new initiative addresses one of the agency’s core goals as outlined by Congress: to provide transformative solutions to improve the management, cleanup, and disposal of radioactive waste and spent nuclear fuel.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.