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Division Spotlight
Young Members Group
The Young Members Group works to encourage and enable all young professional members to be actively involved in the efforts and endeavors of the Society at all levels (Professional Divisions, ANS Governance, Local Sections, etc.) as they transition from the role of a student to the role of a professional. It sponsors non-technical workshops and meetings that provide professional development and networking opportunities for young professionals, collaborates with other Divisions and Groups in developing technical and non-technical content for topical and national meetings, encourages its members to participate in the activities of the Groups and Divisions that are closely related to their professional interests as well as in their local sections, introduces young members to the rules and governance structure of the Society, and nominates young professionals for awards and leadership opportunities available to members.
Meeting Spotlight
2024 ANS Winter Conference and Expo
November 17–21, 2024
Orlando, FL|Renaissance Orlando at SeaWorld
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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December 2024
Nuclear Technology
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November 2024
Latest News
Japanese researchers test detection devices at West Valley
Two research scientists from Japan’s Kyoto University and Kochi University of Technology visited the West Valley Demonstration Project in western New York state earlier this fall to test their novel radiation detectors, the Department of Energy’s Office of Environmental Management announced on November 19.
Jincan Zhang, Lei Cao, Min Liu, Bo Liu, Lin Cheng
Nuclear Science and Engineering | Volume 195 | Number 2 | February 2021 | Pages 173-184
Technical Paper | doi.org/10.1080/00295639.2020.1798679
Articles are hosted by Taylor and Francis Online.
The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.
