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Nuclear Installations Safety
Devoted specifically to the safety of nuclear installations and the health and safety of the public, this division seeks a better understanding of the role of safety in the design, construction and operation of nuclear installation facilities. The division also promotes engineering and scientific technology advancement associated with the safety of such facilities.
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2024 ANS Winter Conference and Expo
November 17–21, 2024
Orlando, FL|Renaissance Orlando at SeaWorld
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
Japanese researchers test detection devices at West Valley
Two research scientists from Japan’s Kyoto University and Kochi University of Technology visited the West Valley Demonstration Project in western New York state earlier this fall to test their novel radiation detectors, the Department of Energy’s Office of Environmental Management announced on November 19.
Shu-Huan Liu, Aqil Hussain, Da Li, Xiaoqiang Guo, Zhuo-Qi Li, Olarewaju Mubashiru Lawal, Jiangkun Yang, Wei Chen
Nuclear Science and Engineering | Volume 191 | Number 1 | July 2018 | Pages 98-103
Technical Paper | doi.org/10.1080/00295639.2018.1450004
Articles are hosted by Taylor and Francis Online.
For evaluating the SiGe heterojunction bipolar transistors (HBTs) performance during and after gamma-ray irradiation, the characteristics of the direct current (dc) gain of the test samples changed with increasing irradiation dose, and collector current injection levels during 60Co gamma irradiation were measured and analyzed. The experimental results of the typical dc and alternating current (ac) electronic parameters before and after irradiation revealed that the base current Ib, the collector current IC, the dc current gain, and the maximum oscillation frequency fmax exhibited degradation. While other electronic parameters including the cut-off frequency fT, the ac current gain |H21|, and output capacitance CBC did not exhibit any significant change compared with those of pre-irradiation. The degradation mechanisms of the typical dc and ac parameters measured in this work were primarily analyzed. The tested results of SiGe HBTs offered some reference data for evaluating the behavior of the test type of device operated in an ionizing radiation environment.
