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Operations & Power
Members focus on the dissemination of knowledge and information in the area of power reactors with particular application to the production of electric power and process heat. The division sponsors meetings on the coverage of applied nuclear science and engineering as related to power plants, non-power reactors, and other nuclear facilities. It encourages and assists with the dissemination of knowledge pertinent to the safe and efficient operation of nuclear facilities through professional staff development, information exchange, and supporting the generation of viable solutions to current issues.
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ANS Student Conference 2025
April 3–5, 2025
Albuquerque, NM|The University of New Mexico
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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General Kenneth Nichols and the Manhattan Project
Nichols
The Oak Ridger has published the latest in a series of articles about General Kenneth D. Nichols, the Manhattan Project, and the 1954 Atomic Energy Act. The series has been produced by Nichols’ grandniece Barbara Rogers Scollin and Oak Ridge (Tenn.) city historian David Ray Smith. Gen. Nichols (1907–2000) was the district engineer for the Manhattan Engineer District during the Manhattan Project.
As Smith and Scollin explain, Nichols “had supervision of the research and development connected with, and the design, construction, and operation of, all plants required to produce plutonium-239 and uranium-235, including the construction of the towns of Oak Ridge, Tennessee, and Richland, Washington. The responsibility of his position was massive as he oversaw a workforce of both military and civilian personnel of approximately 125,000; his Oak Ridge office became the center of the wartime atomic energy’s activities.”
Shu-Huan Liu, Aqil Hussain, Da Li, Xiaoqiang Guo, Zhuo-Qi Li, Olarewaju Mubashiru Lawal, Jiangkun Yang, Wei Chen
Nuclear Science and Engineering | Volume 191 | Number 1 | July 2018 | Pages 98-103
Technical Paper | doi.org/10.1080/00295639.2018.1450004
Articles are hosted by Taylor and Francis Online.
For evaluating the SiGe heterojunction bipolar transistors (HBTs) performance during and after gamma-ray irradiation, the characteristics of the direct current (dc) gain of the test samples changed with increasing irradiation dose, and collector current injection levels during 60Co gamma irradiation were measured and analyzed. The experimental results of the typical dc and alternating current (ac) electronic parameters before and after irradiation revealed that the base current Ib, the collector current IC, the dc current gain, and the maximum oscillation frequency fmax exhibited degradation. While other electronic parameters including the cut-off frequency fT, the ac current gain |H21|, and output capacitance CBC did not exhibit any significant change compared with those of pre-irradiation. The degradation mechanisms of the typical dc and ac parameters measured in this work were primarily analyzed. The tested results of SiGe HBTs offered some reference data for evaluating the behavior of the test type of device operated in an ionizing radiation environment.
