As the result of an attempt to prepare unordered compounds of graphite containing more than 1.5 × 10-3 acceptor per carbon atom by the introduction of both chemical acceptors and radiation damge centers, evidence has been found for mutual destruction of chemical acceptors and damage centers. An analysis of the kinetic behavior of the mutual destruction indicates that the extent of destruction is independent of the order in which the radiation damaging and chemical treatments are carried out. From some auxiliary experiments made necessary by the discovery of the above interaction it is concluded that the graphite bisulfate residue compounds are stable at room temperature, and that the bisulfate ion is not appreciably decomposed by the gamma flux in the reactor during short irradiations. The dependence of some electrical properties of graphite on the concentrations of both chemical acceptors and radiation damage centers has been analyzed on the basis of the two-band theory of a semiconductor above its degeneracy temperature. It is concluded that whereas the Hall effect may be reasonably well understood the behaviors of the electrical resistance and magneto-resistance cannot be understood in terms of this theory, so that the introduction of additional hypotheses appears necessary.