ANS is committed to advancing, fostering, and promoting the development and application of nuclear sciences and technologies to benefit society.
Explore the many uses for nuclear science and its impact on energy, the environment, healthcare, food, and more.
Division Spotlight
Education, Training & Workforce Development
The Education, Training & Workforce Development Division provides communication among the academic, industrial, and governmental communities through the exchange of views and information on matters related to education, training and workforce development in nuclear and radiological science, engineering, and technology. Industry leaders, education and training professionals, and interested students work together through Society-sponsored meetings and publications, to enrich their professional development, to educate the general public, and to advance nuclear and radiological science and engineering.
Meeting Spotlight
ANS Student Conference 2025
April 3–5, 2025
Albuquerque, NM|The University of New Mexico
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
Latest Magazine Issues
Mar 2025
Jul 2024
Latest Journal Issues
Nuclear Science and Engineering
March 2025
Nuclear Technology
Fusion Science and Technology
February 2025
Latest News
ANS 2025 election is open
The American Nuclear Society election is now open. Members can vote for the Society’s next vice president/president-elect and treasurer as well as six board members (four U.S. directors, one non-U.S. director, and one student director). Completed ballots must be submitted by 1:00 p.m. (EDT) on Tuesday, April 15, 2025.
W. M. Pritchard
Nuclear Science and Engineering | Volume 47 | Number 4 | April 1972 | Pages 470-471
Technical Note | doi.org/10.13182/NSE72-A22437
Articles are hosted by Taylor and Francis Online.
Empirical equations were obtained for the surface damage resulting from heavy ion irradiation of silicon and gallium arsenide single crystals in terms of the incident ion fluence. The parameters in these equations were found to depend only on ion speed and not on ion species for a given initial ion energy and a particular semiconductor material.