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Fusion Energy
This division promotes the development and timely introduction of fusion energy as a sustainable energy source with favorable economic, environmental, and safety attributes. The division cooperates with other organizations on common issues of multidisciplinary fusion science and technology, conducts professional meetings, and disseminates technical information in support of these goals. Members focus on the assessment and resolution of critical developmental issues for practical fusion energy applications.
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ANS Student Conference 2025
April 3–5, 2025
Albuquerque, NM|The University of New Mexico
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Latest News
NRC begins special inspection at Hope Creek
The Nuclear Regulatory Commission is conducting a special inspection at Hope Creek nuclear plant in New Jersey to investigate the cause of repeated inoperability of one of the plant’s emergency diesel generators, the agency announced in a February 25 news release.
W. L. Filippone, S. P. Monahan, S. Woolf, J. C. Garth
Nuclear Science and Engineering | Volume 105 | Number 1 | May 1990 | Pages 52-58
Technical Paper | doi.org/10.13182/NSE90-A19212
Articles are hosted by Taylor and Francis Online.
The Sn method for solving the Spencer-Lewis equation for electron transport has been extended to treat three-dimensional multiregion problems. The flux continuity condition, which holds when the flux is expressed as a function of path length for single material region problems, is generalized for multiregion problems by reexpressing the flux as a function of energy. Expressing the fluxes in terms of fixed energy increments, independent of material, rather than fixed path length increments, results in a set of Sn/diamond-difference equations that are nearly identical in form to conventional Sn/diamond-difference equations. The Sn method is then applied to calculate electron energy deposition due to 200-keV electron beams incident on problem geometries typical of silicon and gallium-arsenide semiconductor microelectronic devices. The energy deposition results were found to compare well with results of ACCEPT Monte Carlo calculations. Computer run times required for the Sn calculations were found to be lower than that required for Monte Carlo by factors ranging from 30 to 50.