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Nuclear Criticality Safety
NCSD provides communication among nuclear criticality safety professionals through the development of standards, the evolution of training methods and materials, the presentation of technical data and procedures, and the creation of specialty publications. In these ways, the division furthers the exchange of technical information on nuclear criticality safety with the ultimate goal of promoting the safe handling of fissionable materials outside reactors.
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International Conference on Mathematics and Computational Methods Applied to Nuclear Science and Engineering (M&C 2025)
April 27–30, 2025
Denver, CO|The Westin Denver Downtown
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Argonne’s METL gears up to test more sodium fast reactor components
Argonne National Laboratory has successfully swapped out an aging cold trap in the sodium test loop called METL (Mechanisms Engineering Test Loop), the Department of Energy announced April 23. The upgrade is the first of its kind in the United States in more than 30 years, according to the DOE, and will help test components and operations for the sodium-cooled fast reactors being developed now.
V. V. Verbinski, C. Cassapakis, R. L. Pease, H. L. Scott
Nuclear Science and Engineering | Volume 70 | Number 1 | April 1979 | Pages 66-72
Technical Paper | doi.org/10.13182/NSE79-A18928
Articles are hosted by Taylor and Francis Online.
The validity of the silicon displacement cross section, D(E), was investigated by simultaneous measurements of neutron spectra (E) and of the accumulated damage D = K induced in 2N2222A transistors. The measured values of (E) were folded in with D(E) to obtain eq, the 1-MeV equivalent fluence for damage to silicon, and the ratios D/eq = K/eq ≡ K were obtained for diverse shapes of (E) to determine the stability of K to (E) variations. The value of K was seen to be constant (within 4 to 5%, 1σ) within roughly the same standard deviation as the D = K measurements for two modified reactor spectra that varied by as much as 1000% above a few MeV when normalized at the 0.2-MeV “threshold” of D(E). This helps substantiate the validity of D(E) in characterizing diverse neutron fields for radiation damage of a practical silicon transistor. Earlier studies with large-volume silicon diodes, for monoenergetic neutrons of 0.7 to 14 MeV, tend to corroborate the D(E) validity for transistors over this energy range. These results attest to the accuracy of the shape in terms of gross structure of D(E), which is governed by the accuracy of the ENDF/B-IV neutron cross-section evaluation used and of the Robinson functional representation of the Lindhard factor for determining the fraction of recoil-atom and charged particle kinetic energy that is available to cause displacements.