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The Radiation Protection and Shielding Division is developing and promoting radiation protection and shielding aspects of nuclear science and technology — including interaction of nuclear radiation with materials and biological systems, instruments and techniques for the measurement of nuclear radiation fields, and radiation shield design and evaluation.
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International Conference on Mathematics and Computational Methods Applied to Nuclear Science and Engineering (M&C 2025)
April 27–30, 2025
Denver, CO|The Westin Denver Downtown
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Latest News
Argonne’s METL gears up to test more sodium fast reactor components
Argonne National Laboratory has successfully swapped out an aging cold trap in the sodium test loop called METL (Mechanisms Engineering Test Loop), the Department of Energy announced April 23. The upgrade is the first of its kind in the United States in more than 30 years, according to the DOE, and will help test components and operations for the sodium-cooled fast reactors being developed now.
J. Kohagura et al.
Fusion Science and Technology | Volume 47 | Number 1 | January 2005 | Pages 303-305
Technical Paper | Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST05-A671
Articles are hosted by Taylor and Francis Online.
In order to clarify the effects of fusion-produced neutron irradiation on silicon semiconductor x-ray detectors, the x-ray energy responses of both n- and p-type silicon tomography detectors used in the Joint European Torus (JET) tokamak (n-type) and the GAMMA 10 tandem mirror (p-type) are studied using synchrotron radiation at the Photon Factory of the National Laboratory for High Energy Accelerator Research Organization (KEK). The fusion neutronics source (FNS) of Japan Atomic Energy Research Institute (JAERI) is employed as well-calibrated D-T neutron source with fluences from 1013 to 1015 neutrons/cm2 onto these semiconductor detectors. Different fluence dependence is found between these two types of detectors; that is, (i) for the n-type detector, the recovery of the degraded response is found after the neutron exposure beyond around 1013 neutrons/cm2 onto the detector. A further finding is followed as a "re-degradation" by a neutron irradiation level over about 1014 neutrons/cm2. On the other hand, (ii) the energy response of the p-type detector shows only a gradual decrease with increasing neutron fluences. These properties are interpreted by our proposed theory on semiconductor x-ray responses in terms of the effects of neutrons on the effective doping concentration and the diffusion length of a semiconductor detector.