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2025 ANS Winter Conference & Expo
November 9–12, 2025
Washington, DC|Washington Hilton
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Empowering the next generation: ANS’s newest book focuses on careers in nuclear energy
A new career guide for the nuclear energy industry is now available: The Nuclear Empowered Workforce by Earnestine Johnson. Drawing on more than 30 years of experience across 16 nuclear facilities, Johnson offers a practical, insightful look into some of the many career paths available in commercial nuclear power. To mark the release, Johnson sat down with Nuclear News for a wide-ranging conversation about her career, her motivation for writing the book, and her advice for the next generation of nuclear professionals.
When Johnson began her career at engineering services company Stone & Webster, she entered a field still reeling from the effects of the Three Mile Island incident in 1979, nearly 15 years earlier. Her hiring cohort was the first group of new engineering graduates the company had brought on since TMI, a reflection of the industry-wide pause in nuclear construction. Her first long-term assignment—at the Millstone site in Waterford, Conn., helping resolve design issues stemming from TMI—marked the beginning of a long and varied career that spanned positions across the country.
J. Kohagura et al.
Fusion Science and Technology | Volume 47 | Number 1 | January 2005 | Pages 303-305
Technical Paper | Open Magnetic Systems for Plasma Confinement | doi.org/10.13182/FST05-A671
Articles are hosted by Taylor and Francis Online.
In order to clarify the effects of fusion-produced neutron irradiation on silicon semiconductor x-ray detectors, the x-ray energy responses of both n- and p-type silicon tomography detectors used in the Joint European Torus (JET) tokamak (n-type) and the GAMMA 10 tandem mirror (p-type) are studied using synchrotron radiation at the Photon Factory of the National Laboratory for High Energy Accelerator Research Organization (KEK). The fusion neutronics source (FNS) of Japan Atomic Energy Research Institute (JAERI) is employed as well-calibrated D-T neutron source with fluences from 1013 to 1015 neutrons/cm2 onto these semiconductor detectors. Different fluence dependence is found between these two types of detectors; that is, (i) for the n-type detector, the recovery of the degraded response is found after the neutron exposure beyond around 1013 neutrons/cm2 onto the detector. A further finding is followed as a "re-degradation" by a neutron irradiation level over about 1014 neutrons/cm2. On the other hand, (ii) the energy response of the p-type detector shows only a gradual decrease with increasing neutron fluences. These properties are interpreted by our proposed theory on semiconductor x-ray responses in terms of the effects of neutrons on the effective doping concentration and the diffusion length of a semiconductor detector.