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Nuclear Energy Conference & Expo (NECX)
September 8–11, 2025
Atlanta, GA|Atlanta Marriott Marquis
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Nuclear Science and Engineering
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Nuclear Technology
Fusion Science and Technology
July 2025
Latest News
Hash Hashemian: Visionary leadership
As Dr. Hashem M. “Hash” Hashemian prepares to step into his term as President of the American Nuclear Society, he is clear that he wants to make the most of this unique moment.
A groundswell in public approval of nuclear is finding a home in growing governmental support that is backed by a tailwind of technological innovation. “Now is a good time to be in nuclear,” Hashemian said, as he explained the criticality of this moment and what he hoped to accomplish as president.
Ruihuan Li, Xiaoxiao Cao, Zhixian Su, Dan Sun, Yedi Chen, Wei Feng, Zhihui Zhang, Jijun Zhao
Fusion Science and Technology | Volume 77 | Number 6 | August 2021 | Pages 419-428
Technical Paper | doi.org/10.1080/15361055.2021.1920784
Articles are hosted by Taylor and Francis Online.
Density functional theory calculations were used to study the effects of inherent impurities C, N, and O on the stability and the self-trapping of interstitial He atoms in body-centered-cubic vanadium (V). The most stable site for the He atom nearby C, N, and O is the tetrahedral interstitial site (T-site) rather than the octahedral interstitial site (O-site). The presence of C, N, or O impurities reduces the stability of He in the T-site according to the calculated formation energies. The addition of C and O atoms is beneficial for He self-trapping while the addition of the N atom prevents He self-trapping in vanadium. The stable configurations for Xn-vacancy1 (XnVa1) are C2Va1, N2Va1, and O2Va1. The trapping energies of multiple He atoms captured by XnVa1 are investigated. Our results show that the presence of C, N, and O reduces vacancy trapping of He atoms. Our findings provide further understanding on the behavior of He atoms in vanadium with the influence of C, N, and O.
