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Fusion Science and Technology
Latest News
General Kenneth Nichols and the Manhattan Project
Nichols
The Oak Ridger has published the latest in a series of articles about General Kenneth D. Nichols, the Manhattan Project, and the 1954 Atomic Energy Act. The series has been produced by Nichols’ grandniece Barbara Rogers Scollin and Oak Ridge (Tenn.) city historian David Ray Smith. Gen. Nichols (1907–2000) was the district engineer for the Manhattan Engineer District during the Manhattan Project.
As Smith and Scollin explain, Nichols “had supervision of the research and development connected with, and the design, construction, and operation of, all plants required to produce plutonium-239 and uranium-235, including the construction of the towns of Oak Ridge, Tennessee, and Richland, Washington. The responsibility of his position was massive as he oversaw a workforce of both military and civilian personnel of approximately 125,000; his Oak Ridge office became the center of the wartime atomic energy’s activities.”
J. H. Yeom, C. M. Ryu, M. Kwon, T. Lho
Fusion Science and Technology | Volume 43 | Number 1 | January 2003 | Pages 180-182
Transport and Confinement | doi.org/10.13182/FST03-A11963589
Articles are hosted by Taylor and Francis Online.
The chaotic phenomena of the low frequency magnetic fluctuations in the HANBIT device have been studied and measured by two magnetic probe arrays in the central cell. The HANA (HANBIT Nonlinear Analysis) code has been developed and used to analyze the magnetic fluctuations to determine whether or not it is chaotic. The autocorrelation function of the magnetic fluctuations is obtained at two different positions in the HANBIT device and was also used to determine chaotic transition. The influence of the magnetic field strength on the magnetic fluctuations has also been studied. When the magnetic field strength is over 0.229 T~ 0.233 T, wave bifurcation is observed and the Primary Lyapunov Exponent (PLE) value is increased. Hence, there is chaotic transition at a specific magnetic field strength in the HANBIT device.
