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Nuclear Nonproliferation Policy
The mission of the Nuclear Nonproliferation Policy Division (NNPD) is to promote the peaceful use of nuclear technology while simultaneously preventing the diversion and misuse of nuclear material and technology through appropriate safeguards and security, and promotion of nuclear nonproliferation policies. To achieve this mission, the objectives of the NNPD are to: Promote policy that discourages the proliferation of nuclear technology and material to inappropriate entities. Provide information to ANS members, the technical community at large, opinion leaders, and decision makers to improve their understanding of nuclear nonproliferation issues. Become a recognized technical resource on nuclear nonproliferation, safeguards, and security issues. Serve as the integration and coordination body for nuclear nonproliferation activities for the ANS. Work cooperatively with other ANS divisions to achieve these objective nonproliferation policies.
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General Kenneth Nichols and the Manhattan Project
Nichols
The Oak Ridger has published the latest in a series of articles about General Kenneth D. Nichols, the Manhattan Project, and the 1954 Atomic Energy Act. The series has been produced by Nichols’ grandniece Barbara Rogers Scollin and Oak Ridge (Tenn.) city historian David Ray Smith. Gen. Nichols (1907–2000) was the district engineer for the Manhattan Engineer District during the Manhattan Project.
As Smith and Scollin explain, Nichols “had supervision of the research and development connected with, and the design, construction, and operation of, all plants required to produce plutonium-239 and uranium-235, including the construction of the towns of Oak Ridge, Tennessee, and Richland, Washington. The responsibility of his position was massive as he oversaw a workforce of both military and civilian personnel of approximately 125,000; his Oak Ridge office became the center of the wartime atomic energy’s activities.”
H. K. Na, D. C. Seo, J.Y. Kim, S.G. Lee, J.G. Bak, B. C. Kim, W. C. Kim, M. Kwon, HANBIT project team
Fusion Science and Technology | Volume 43 | Number 1 | January 2003 | Pages 162-166
Transport and Confinement | doi.org/10.13182/FST03-A11963585
Articles are hosted by Taylor and Francis Online.
The wall recycling effect dominantly appears in the ICRH discharge with ω < ωci in the HANBIT plasma. The methods and evaluation of wall conditioning are described. The progress of wall conditioning is monitored with neutral pressure and plasma parameters. Electron cyclotron resonance–discharge cleaning(ECR-DC) is applied to improve wall conditioning, and then electron impact desorption(EID) by filament heating is utilized in order to desorb the impurities from the wall. The impurities are analyzed quantitatively by quadrupole mass spectrometer(QMA). We also install new baking system by Halogen lamp radiation with 2 kW in the HANBIT central cell. It is also observed that Hα emission reduces after lamp heating. The evolution of neutral pressure profiles are carefully evaluated during discharge and monitored discharge cleaning effect after several hundred of radio frequency(rf) shots. The partial pressure of light impurities much reduced after rf discharges The line integrated density and edge density much decreased after rf shots, while edge temperature increases. After ECR-DC, also line density decreases, but edge temperature much increases. Plasma beta goes up more than three times after 250 rf shots.