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Division Spotlight
Isotopes & Radiation
Members are devoted to applying nuclear science and engineering technologies involving isotopes, radiation applications, and associated equipment in scientific research, development, and industrial processes. Their interests lie primarily in education, industrial uses, biology, medicine, and health physics. Division committees include Analytical Applications of Isotopes and Radiation, Biology and Medicine, Radiation Applications, Radiation Sources and Detection, and Thermal Power Sources.
Meeting Spotlight
Utility Working Conference and Vendor Technology Expo (UWC 2024)
August 4–7, 2024
Marco Island, FL|JW Marriott Marco Island
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Fusion Science and Technology
Latest News
Vogtle-3 shuts down for valve issue
One of the new Vogtle units in Georgia was shut down unexpectedly on Monday last week for a valve issue that has since been investigated and repaired. According to multiple local news outlets, Georgia Power reported on July 17 that Unit 3 was back in service.
Southern Company spokesperson Jacob Hawkins confirmed that Vogtle-3 went off line at 9:25 p.m. local time on July 8 “due to lowering water levels in the steam generators caused by a valve issue on one of the three main feedwater pumps.”
K. Iguchi, Y. Morimoto, T. Sugiyama, S. Akahori, K. Okuno, H. Nakamura, M. Nishi
Fusion Science and Technology | Volume 39 | Number 2 | March 2001 | Pages 905-909
Divertor and Plasma-Facing Components | doi.org/10.13182/FST01-A11963355
Articles are hosted by Taylor and Francis Online.
Studies on chemical behavior of energetic deuterium implanted into SiC, Si, and graphite were carried out by means of the X-ray photoelectron spectroscopy (XPS) and the thermal desorption spectroscopy (TDS). Two chemical states of implanted deuterium were observed in SiC. It was suggested that the one was contribution of deuterium in interstitial, and the other was contribution of deuterium in defects resulted by deuterium ion (D2+) implantation. From the results for Si, it was found that implanted deuterium existed in Si with three chemical states. The deuterium behavior in graphite was different with that in SiC and in Si. The deuterium chemical behavior in SiC was discussed in comparison with that implanted into Si and graphite.