To study chemical behaviors of energetic deuterium implanted into boron coating deposited by boronization in fusion devices, two types of boron coating film deposited on silicon and IG-430U were prepared by Plasma Chemical Vapor Deposition (PCVD) technique. Boron polycrystal was used as the reference sample. The chemical behavior of deuterium was investigated by XPS (X-ray photoelectron spectroscopy) and TDS (Thermal adsorption spectroscopy).

The 1.0 keV D2+ ions were implanted into the samples and the deuterium desorption behavior was studied by TDS. The TDS spectra showed that there were two deuterium release peaks at around 550 and 750 K, which were attributed to the release from deuterium trapped by boron and carbon, respectively. It was also found that most of implanted deuterium was trapped in carbon trapping site compared with boron one.

In XPS measurements, the chemical shift of B-1s towards positive side was observed in the film on IG-430U after D2+ ion implantation. However, no chemical shifts were found in the film on silicon and boron polycrystal. In highly concentrated boron materials, even if deuterium was implanted into the boron materials, the amount of B-D bond was too low to be measured by XPS. This suggests that deuterium implanted into highly pure boron materials wasn't almost trapped, so that the retention of deuterium in the boron materials would be reduced, compared that in carbon materials.