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General Kenneth Nichols and the Manhattan Project
Nichols
The Oak Ridger has published the latest in a series of articles about General Kenneth D. Nichols, the Manhattan Project, and the 1954 Atomic Energy Act. The series has been produced by Nichols’ grandniece Barbara Rogers Scollin and Oak Ridge (Tenn.) city historian David Ray Smith. Gen. Nichols (1907–2000) was the district engineer for the Manhattan Engineer District during the Manhattan Project.
As Smith and Scollin explain, Nichols “had supervision of the research and development connected with, and the design, construction, and operation of, all plants required to produce plutonium-239 and uranium-235, including the construction of the towns of Oak Ridge, Tennessee, and Richland, Washington. The responsibility of his position was massive as he oversaw a workforce of both military and civilian personnel of approximately 125,000; his Oak Ridge office became the center of the wartime atomic energy’s activities.”
H. Kodama, Y. Morimoto, M. Sasaki, M. Oyaidu, Y. Oya, A. Sagara, N. Noda, K. Okuno
Fusion Science and Technology | Volume 44 | Number 2 | September 2003 | Pages 420-424
Technical Paper | Fusion Energy - Tritium and Safety and Environment | doi.org/10.13182/FST03-A371
Articles are hosted by Taylor and Francis Online.
To study chemical behaviors of energetic deuterium implanted into boron coating deposited by boronization in fusion devices, two types of boron coating film deposited on silicon and IG-430U were prepared by Plasma Chemical Vapor Deposition (PCVD) technique. Boron polycrystal was used as the reference sample. The chemical behavior of deuterium was investigated by XPS (X-ray photoelectron spectroscopy) and TDS (Thermal adsorption spectroscopy).The 1.0 keV D2+ ions were implanted into the samples and the deuterium desorption behavior was studied by TDS. The TDS spectra showed that there were two deuterium release peaks at around 550 and 750 K, which were attributed to the release from deuterium trapped by boron and carbon, respectively. It was also found that most of implanted deuterium was trapped in carbon trapping site compared with boron one.In XPS measurements, the chemical shift of B-1s towards positive side was observed in the film on IG-430U after D2+ ion implantation. However, no chemical shifts were found in the film on silicon and boron polycrystal. In highly concentrated boron materials, even if deuterium was implanted into the boron materials, the amount of B-D bond was too low to be measured by XPS. This suggests that deuterium implanted into highly pure boron materials wasn't almost trapped, so that the retention of deuterium in the boron materials would be reduced, compared that in carbon materials.