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DOE announces Genesis Mission request for applications
Ian Buck, Nvidia’s vice president of hyperscale and HPC computing (left), and Darío Gil, DOE Under Secretary for Science and Genesis Mission lead, at the Nvidia GPU Technology Conference. (Photo: Nvidia)
Department of Energy Under Secretary for Science and Genesis Mission lead Darío Gil participated in a session at the Nvidia GPU Technology Conference on March 17 that coincided with the announcement of the DOE’s $293 million Genesis Mission request for applications, which invites interdisciplinary teams to submit ideas for projects addressing over 20 of Genesis’s stated national challenges, several of which focus on accelerating nuclear research and nuclear energy output.
“We seek breakthrough ideas and novel collaborations leveraging the scientific prowess of our national laboratories, the private sector, universities, and science philanthropies,” said Gil.
P. A. Rayjada, N. P. Vaghela, N. L. Chauhan, A. Sircar, E. Rajendrakumar, L. M. Manocha, P. M. Raole
Fusion Science and Technology | Volume 65 | Number 2 | March-April 2014 | Pages 194-198
Technical Paper | doi.org/10.13182/FST13-649
Articles are hosted by Taylor and Francis Online.
India has proposed to develop and test the Lead-Lithium–cooled Ceramic Breeder Test Blanket Module (In-LLCB-TBM) in ITER. This concept, unlike some others, may need a high-performance ceramic coating on the inner wall to meet dual requirements such as high insulation to mitigate magnetohydrodynamic effects and a tritium permeation barrier to avoid tritium in the structural material. We deposit Er2O3 coatings using a direct-current magnetron reactive sputter deposition technique. As part of optimizing the coating from the application point of view, we carried out a series of deposition experiments. These included investigating the effects of substrate temperature in the range 165°C to 360°C, the effects of postannealing, and the effects of oxygen-to-argon gas flow ratio, keeping all other process parameters constant. Primarily, a densely packed film is required to grow in the most stable cubic crystal structure, with very high resistivity, in the range of gigaohm-centimeters to teraohm-centimeters. The results indicate that erbia films of thicknesses in the range 270 to 1000 nm are formed in amorphous, monoclinic, and cubic phases, where the cubic phase content is enhanced in a narrow window of the flow ratio at 360°C. Both crystalline phases seem to grow in a preferred crystalline direction. Post-vacuum-annealing at 500°C for 2 h largely transforms the monoclinic phase into the cubic phase.