Steady state permeation behavior of deuterium implanted into oxide free copper (50 µm thickness, 99.99% purity) and F82H (0.2 mm thickness) was investigated. The rate limiting process of the permeation through copper was determined from the results of the numerical analysis by TMAP code. Based on the numerical analysis, recombination coefficient and diffusion coefficient in the implantation region were derived, and implantation effects on the diffusion coefficient in the implantation region were also discussed. In the F82H experiment, strong effect of low energy deuterium implantation on the deuterium transport in the implantation region was observed.