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Division members promote the advancement of mathematical and computational methods for solving problems arising in all disciplines encompassed by the Society. They place particular emphasis on numerical techniques for efficient computer applications to aid in the dissemination, integration, and proper use of computer codes, including preparation of computational benchmark and development of standards for computing practices, and to encourage the development on new computer codes and broaden their use.
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2027 ANS Winter Conference and Expo
October 31–November 4, 2027
Washington, DC|The Westin Washington, DC Downtown
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The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Disney World should have gone nuclear
There is extra significance to the American Nuclear Society holding its annual meeting in Orlando, Florida, this past week. That’s because in 1967, the state of Florida passed a law allowing Disney World to build a nuclear power plant.
Hirofumi Nakamura, Wataru Shu, Takumi Hayashi, Shigeru OHira, Masataka Nishi, Masayasu Sugisaki
Fusion Science and Technology | Volume 41 | Number 3 | May 2002 | Pages 887-891
Material Interaction and Permeation | Proceedings of the Sixth International Conference on Tritium Science and Technology Tsukuba, Japan November 12-16, 2001 | doi.org/10.13182/FST02-A22712
Articles are hosted by Taylor and Francis Online.
Steady state permeation behavior of deuterium implanted into oxide free copper (50 µm thickness, 99.99% purity) and F82H (0.2 mm thickness) was investigated. The rate limiting process of the permeation through copper was determined from the results of the numerical analysis by TMAP code. Based on the numerical analysis, recombination coefficient and diffusion coefficient in the implantation region were derived, and implantation effects on the diffusion coefficient in the implantation region were also discussed. In the F82H experiment, strong effect of low energy deuterium implantation on the deuterium transport in the implantation region was observed.
