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Division Spotlight
Education, Training & Workforce Development
The Education, Training & Workforce Development Division provides communication among the academic, industrial, and governmental communities through the exchange of views and information on matters related to education, training and workforce development in nuclear and radiological science, engineering, and technology. Industry leaders, education and training professionals, and interested students work together through Society-sponsored meetings and publications, to enrich their professional development, to educate the general public, and to advance nuclear and radiological science and engineering.
Meeting Spotlight
Utility Working Conference and Vendor Technology Expo (UWC 2024)
August 4–7, 2024
Marco Island, FL|JW Marriott Marco Island
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Fusion Science and Technology
Latest News
Vogtle-3 shuts down for valve issue
One of the new Vogtle units in Georgia was shut down unexpectedly on Monday last week for a valve issue that has been investigated and repaired. According to multiple local news outlets, Georgia Power reported on July 17 that unit 3 was back in service.
Southern Company spokesperson Jacob Hawkins confirmed that Vogtle-3 went off line at 9:25 p.m. on July 8 “due to lowering water levels in the steam generators caused by a valve issue on one of the three main feedwater pumps.”
Baojun Liu, Nazir P. Kherani, Stefan Zukotynski, Armando B. Antoniazzi, Kevin P. Chen
Fusion Science and Technology | Volume 54 | Number 2 | August 2008 | Pages 627-630
Technical Paper | Process Applications | doi.org/10.13182/FST08-A1893
Articles are hosted by Taylor and Francis Online.
We report on a simple and versatile method for the integration of tritium in semiconductor materials. A variety of semiconductor materials are exposed to tritium (T2) gas at pressures of up to 120 bar and temperatures of up to 250 °C. Tritiated materials include hydrogenated amorphous silicon (a-Si:H), crystalline silicon (c-Si), silica and carbon nanotubes (CNT). Deep ultra-violet laser irradiation was used to lock tritium in silica films. Effusion measurements show the presence of stable tritium in silicon, silica and CNTs up to 400 °C. IR absorption spectra show a Si-T stretching mode at 1200 cm-1 indicating the formation of stable Si-T bonds in a-Si:H. SIMS measurements show that the penetration depth of tritium in a-Si:H and c-Si is 150 and 10 nm, respectively; the concentration of tritium locked in a-Si:H and c-Si is 20 and 4 at.%, respectively. In tritiated silica, 248-nm UV laser irradiation locks the permeated tritium at stable chemical bonding sites in the silica lattice. Thermal effusion measurement shows that 0.5 wt.% tritium can be stably immobilized in CNTs. The application of tritiated silicon as a cold electron source is demonstrated.