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Division Spotlight
Radiation Protection & Shielding
The Radiation Protection and Shielding Division is developing and promoting radiation protection and shielding aspects of nuclear science and technology — including interaction of nuclear radiation with materials and biological systems, instruments and techniques for the measurement of nuclear radiation fields, and radiation shield design and evaluation.
Meeting Spotlight
Utility Working Conference and Vendor Technology Expo (UWC 2024)
August 4–7, 2024
Marco Island, FL|JW Marriott Marco Island
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Fusion Science and Technology
Latest News
Vogtle-3 shuts down for valve issue
One of the new Vogtle units in Georgia was shut down unexpectedly on Monday last week for a valve issue that has since been investigated and repaired. According to multiple local news outlets, Georgia Power reported on July 17 that Unit 3 was back in service.
Southern Company spokesperson Jacob Hawkins confirmed that Vogtle-3 went off line at 9:25 p.m. local time on July 8 “due to lowering water levels in the steam generators caused by a valve issue on one of the three main feedwater pumps.”
Tome Kosteski, Nazir P. Kherani, Walter T. Shmayda, Stefan Costea, Stefan Zukotynski
Fusion Science and Technology | Volume 48 | Number 1 | July-August 2005 | Pages 700-703
Technical Paper | Tritium Science and Technology - Properties, Reactions, and Applications | doi.org/10.13182/FST05-A1020
Articles are hosted by Taylor and Francis Online.
p-i-n junction nuclear devices have been made using tritiated amorphous silicon in the intrinsic region. In this unique device, tritium passivates defects and at the same time is an internal source of beta particles. The beta particles traverse the i-layer and through impact ionization, electron-hole pairs are generated. These charges are separated by the built-in field of the p-i-n junction and electrical power is generated. The power from the devices is about 0.2 nW cm-2 in a device of 400 nm thickness. The decay of tritium leads to the formation of dangling bonds and strain related defects in the silicon lattice. These defects lead to a decrease in the effective width of the space charge region and thereby to an increase in the recombination rate of carriers. As a consequence the electric power decreases with time. To overcome this degradation in performance, delta layered devices were made by selectively introducing tritium into the intrinsic region by modulating the tritium gas fraction during film deposition. The electric power from devices with a delta layer have better stability.