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Division Spotlight
Nuclear Nonproliferation Policy
The mission of the Nuclear Nonproliferation Policy Division (NNPD) is to promote the peaceful use of nuclear technology while simultaneously preventing the diversion and misuse of nuclear material and technology through appropriate safeguards and security, and promotion of nuclear nonproliferation policies. To achieve this mission, the objectives of the NNPD are to: Promote policy that discourages the proliferation of nuclear technology and material to inappropriate entities. Provide information to ANS members, the technical community at large, opinion leaders, and decision makers to improve their understanding of nuclear nonproliferation issues. Become a recognized technical resource on nuclear nonproliferation, safeguards, and security issues. Serve as the integration and coordination body for nuclear nonproliferation activities for the ANS. Work cooperatively with other ANS divisions to achieve these objective nonproliferation policies.
Meeting Spotlight
2027 ANS Winter Conference and Expo
October 31–November 4, 2027
Washington, DC|The Westin Washington, DC Downtown
Standards Program
The Standards Committee is responsible for the development and maintenance of voluntary consensus standards that address the design, analysis, and operation of components, systems, and facilities related to the application of nuclear science and technology. Find out What’s New, check out the Standards Store, or Get Involved today!
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Nov 2024
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Nuclear Science and Engineering
December 2024
Nuclear Technology
Fusion Science and Technology
November 2024
Latest News
Disney World should have gone nuclear
There is extra significance to the American Nuclear Society holding its annual meeting in Orlando, Florida, this past week. That’s because in 1967, the state of Florida passed a law allowing Disney World to build a nuclear power plant.
Technical Session|Sponsored by IRD
Monday, June 12, 2023|1:00–2:45PM EDT|Marriott 9
Session Chair:
Padhraic L. Mulligan
Session Organizer:
Alternate Chair:
Lei R. Cao
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Epilayer on NEAT Grown GaN Schottky Diodes for Radiation Detection
1:00–1:20PM EDT
Jarod Remy (Ohio State), Yuxuan Zhang (Ohio State), Vishank Talesara (Ohio State), Hongping Zhao (Ohio State), Wu Lu (Ohio State), Tadao Hashimoto (SixPoint Materials), Lei R. Cao (Ohio State)
Paper
Microstructure and Defect Study of Wide Bandgap β-Gallium Oxide
1:20–1:40PM EDT
L.R. Gomez-Hurtado (NCSU), R. McRobie (NCSU), C-H. Shiau (Boise State), Y.Q. Wu (Boise State), M. Liu (NCSU), C. Fleming (NCSU), A.I. Hawari (NCSU), C. Sun (INL), G. Yang (NCSU)
Interplay of Electrical and Thermomechanical Properties of Transmutation Doped SiC
1:40–2:00PM EDT
J. Keith Jewell (INL), J. Rory Kennedy (INL)
Investigation of Ga2O3 Radiation Sensitivity and Resistance to High Temperatures
2:00–2:20PM EDT
Jarod Remy (Ohio State), Thomas Blue (Ohio State), Parans Paranthaman (ORNL), Lei R. Cao (Ohio State)
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